Bazizi, E.M.E.M.BaziziPakfar, A.A.PakfarFazzini, P.F.P.F.FazziniCristiano, F.F.CristianoTavernier, C.C.TavernierClaverie, A.A.ClaverieBurenkov, A.A.BurenkovPichler, P.P.Pichler2022-03-112022-03-112009https://publica.fraunhofer.de/handle/publica/36278110.1109/ESSDERC.2009.5331510In this work, the influence of the silicon/Buried OXide interface (Si/BOX) on the electrical characteristics of Silicon-On-Insulator (SOI) MOSFETs is investigated by means of numerical simulations. Considering the state-of-the-art dopant diffusion models and the effect of Si/BOX interface as a point defect sink, process simulations were performed to investigate the two-dimensional diffusion behaviour of the dopant impurities. The impact of the Si/BOX interface on the shape of the different active zones profiles was investigated by analyzing the standard electrical characteristics of CMOS devices. Finally, a new electrical characterization methodology is detailed to better analyze dopants lateral diffusion profiles.enSOIMOSFETpoint defectsdoping670620530conference paper