Kärkkäinen, M.M.KärkkäinenKantanen, M.M.KantanenCaujolle-Bert, S.S.Caujolle-BertVaronen, M.M.VaronenWeber, RainerRainerWeberLeuther, ArnulfArnulfLeutherSeelmann-Eggebert, M.M.Seelmann-EggebertAlanne, A.A.AlanneJukkala, P.P.JukkalaNärhi, T.T.NärhiHalonen, K.A.I.K.A.I.Halonen2022-03-042022-03-042014https://publica.fraunhofer.de/handle/publica/23706410.1109/TTHZ.2014.23273832-s2.0-84903782574To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here, the performances of 165 and 183 GHz low-noise amplifier microchips intended for atmospheric water vapor profiling application are reported. The microchips are manufactured in metamorphic high-electron mobility transistor technology having a gate length of 50 nm. The on-wafer measured results show noise figures of 4.4-7.4 dB and 16-25 dB gain at the operating frequencies. In addition, two of the amplifiers were assembled in waveguide packages and the measured results show a gain of 19-20 dB and 7 dB noise figure at both 165 and 183 GHz.enjournal article