Breithaupt, B.B.BreithauptDavid, H.H.H.H.DavidBallhorn, R.R.BallhornJacobs, E.P.E.P.JacobsWindbracke, W.W.WindbrackeZwicker, G.G.Zwicker2022-03-032022-03-031991https://publica.fraunhofer.de/handle/publica/17958210.1016/0167-9317(91)90102-JPartially scaled 0.25 mu m NMOS transistors have been fabricated using X-ray lithography with synchrotron radiation (SRL). In this paper the present quality of this technique combined with the application of the X-ray sensitive resist RAY PF is discussed with special regard to pattern transfer and linewidth control. Fabrication process steps of the NMOS transistors are presented and electrical data of the devices are discussed.enmasksMOS integrated circuitsphotoresistssynchrotron radiationX-ray lithography621journal article