Under CopyrightSteffens, MichaelMichaelSteffensHöffgen, StefanStefanHöffgenPoizat, MarcMarcPoizat2022-03-1323.1.20182017https://publica.fraunhofer.de/handle/publica/39931810.24406/publica-fhg-399318We present radiation tests performed on Power bipolar transistors, which evaluated concerning their ELDRS sensitivity to TID levels up to 200 krad(Si) with Co60. Additionally a selection of commercial SiC power devices are tested with Co60 at high dose rates to TID levels of 1 Mrad(Si).en620poster