Saint-Cast, PierrePierreSaint-CastBenick, JanJanBenickKania, D.D.KaniaWeiss, L.L.WeissHofmann, MarcMarcHofmannRentsch, JochenJochenRentschPreu, RalfRalfPreuGlunz, Stefan W.Stefan W.Glunz2022-03-042022-03-042010https://publica.fraunhofer.de/handle/publica/22249110.1109/LED.2010.20491902-s2.0-77954121960Ultrathin (7 nm) atomic layer deposited Al2O3 layers and high-deposition-rate plasma-enhanced chemical vapor deposited AlOx layers have been applied and characterized as rear-surface passivation for high-efficiency silicon solar cells. The excellent efficiency values (up to 21.3%-21.5%) demonstrate that both aluminum oxide deposition processes have a very high potential comparable to the reference cells with SiO2 passivation. The high voltages (similar to 680 mV), the excellent long-wavelength quantum efficiency, and the high short-circuit currents of these cells (similar to 40 mA/cm(2)) are a proof for the low rear-surface recombination velocity and excellent internal rear-surface reflection.enPV Produktionstechnologie und QualitätssicherungSilicium-PhotovoltaikCharakterisierung von Prozess- und Silicium-MaterialienMesstechnik und ProduktionskontrolleCharakterisierungZellen und Module621697journal article