Lefevre, A.A.LefevreFerreira, D.D.FerreiraVeillerot, M.M.VeillerotBarnes, J.-P.J.-P.BarnesParat, G.G.ParatCzernohorsky, M.M.CzernohorskyLallemand, F.F.Lallemand2022-03-052022-03-052017https://publica.fraunhofer.de/handle/publica/24728110.1116/1.4972232Metal-insulator-metal (MIM) capacitors with TiN and high thickness of Al2O3 above 50 nm were fabricated to address high voltage (>30 V) and linear capacitor applications. Atomic layer deposition is used to deposit both TiN and Al2O3 to guarantee a good composition and thickness control. The impact of the deposition process and post-treatment condition on the MIM capacitor's breakdown voltage is studied and correlated with time of flight-secondary ion mass spectrometry (ToF-SIMS). Higher deposition temperature and thermal treatment of TiN and Al2O3 after deposition increase breakdown voltage and improve uniformity. ToF-SIMS demonstrates that Al2O3 higher deposition temperature or rapid thermal processing annealing reduce the diffusion of TiN in Al2O3 leading to thinner TiN/Al2O3 interface layers that influence breakdown voltage and uniformity.en621journal article