Kunzel, H.H.KunzelAlbrecht, P.P.AlbrechtEbert, S.S.EbertGibis, R.R.GibisHarde, P.P.HardeKaiser, R.R.KaiserKizuki, H.H.KizukiMalchow, S.S.Malchow2022-03-032022-03-031998https://publica.fraunhofer.de/handle/publica/19391310.1063/1.121537Iron doping of InP and GaInAsP( lambda g=1.05 mu m) layers grown by metalorganic molecular beam epitaxy was studied using elemental source material in combination with a conventional effusion cell. This study was aimed at the creation of semi-insulating optical waveguides under growth conditions compatible with selective area growth. Secondary ion mass spectroscopy measurements revealed a reproducible and homogeneous incorporation behavior of the iron dopant in the materials investigated. Resistivities in excess of 109 Omega cm were obtained for both compositions at medium doping levels. GaInAsP/InP waveguide structures grown at 485 degrees C-the minimum temperature necessary for selective deposition-exhibited averaged resistivities of 5*107 Omega cm in combination with optical losses of 2.5+or-0.5 dB/cm.enchemical beam epitaxial growthelectrical resistivitygallium arsenidegallium compoundsiii-v semiconductorsindium compoundsintegrated optoelectronicsironoptical lossesoptical waveguidessecondary ion mass spectrasemiconductor dopingsemiconductor growthmetalorganic molecular beam epitaxial growthmombeintegrated photonic devicesiron dopingelemental source materialeffusion cellsemi-insulating optical waveguidessecondary ion mass spectroscopyincorporation behaviourresistivitiesdoping levelsGaInAsP/InP waveguide structures1.05 mum1e9 ohmcm485 c5e7 ohmcm621journal article