Dietz, R.J.B.R.J.B.DietzWilk, R.R.WilkGlobisch, B.B.GlobischRoehle, H.H.RoehleStanze, D.D.StanzeUllrich, S.S.UllrichSchumann, S.S.SchumannBorn, N.N.BornVoss, N.N.VossStecher, M.M.StecherKoch, M.M.KochSartorius, B.B.SartoriusSchell, M.M.Schell2022-03-122022-03-122012https://publica.fraunhofer.de/handle/publica/37893010.1109/IRMMW-THz.2012.6380349We present first results of pulsed THz emission from low temperature (LT) MBE grown Be-doped InGaAs/InAlAs multi-nanolayer structures at an excitation wavelength of 1030 nm. The spectra obtained reach 3 THz. We further investigate the material's relaxation time constants by differential transmission experiments.en621conference paper