Khan, Md AsifMd AsifKhanBahubalindruni, Pydi GangaPydi GangaBahubalindruniMay, AlexanderAlexanderMayRossi, ChiaraChiaraRossiRommel, MathiasMathiasRommel2025-07-152025-07-152024-12-16https://publica.fraunhofer.de/handle/publica/48957210.1109/iSES63344.2024.000234H-Silicon Carbide (4H-SiC) technology is well known for its superior thermal conductivity, high-temperature stability, and robustness in harsh environments. This paper presents three distinct temperature-sensing readout circuits (a PMOS array, an NMOS array, and a CMOS-based ring os-cilia tor) utilizing this technology. The readout circuits with PMOS and NMOS arrays are showing Proportional to Absolute Temperature (PTAT) behavior. For a temperature range of 25-200 ° C, these designs are showing a sensitivity of 26.8 mV/ ° C (PMOS array) and 19.60 mV/° C (NMOS array), respectively, at a VDD of 20 V. At the same power supply voltage a 7-stage CMOS ring oscillator-based sensor which gives the digital output, is showing a sensitivity of 44.01 kHz °C and a power consumption of 2.14 m W. These readout circuits find potential applications in implementing on-chip temperature sensing systems.enMobilityPMOS and NMOS ArrayRing OscillatorSensitivityTemperatureThresold Voltageconference paper