Lewke, D.D.LewkeKoitzsch, M.M.KoitzschDohnke, K.O.K.O.DohnkeSchellenberger, M.M.SchellenbergerZuehlke, H.-U.H.-U.ZuehlkeRupp, R.R.RuppPfitzner, L.L.PfitznerRyssel, H.H.Ryssel2022-03-122022-03-122014https://publica.fraunhofer.de/handle/publica/38765310.1557/opl.2014.566The silicon carbide (SiC) market is gaining momentum hence productivity in device manufacturing has to be improved. The current transition from 100 mm SiC-wafers to 150 mm SiC-wafers requires novel processes in the front-end as well as the back-end of SiC-chip production. Dicing of fully processed SiC-wafers is becoming a bottleneck process since current state-of-the-art mechanical blade dicing faces heavy tool wear and achieves low throughput due to low feed rates in the range of only a few mm/s. This paper presents latest results of the novel dicing technology Thermal Laser Separation (TLS) applied for separating SiC-JFETs. We demonstrate for the first time that TLS is capable of dicing fully processed 4H-SiC wafers, including back side metal layer stacks, process control monitoring (PCM), and metal structures inside the dicing streets with feed rates up to 200 mm/s. TLS thus paves the way to efficient dicing of 150 mm SiC-wafers. Copyrighten670conference paper