Under CopyrightKuenle, M.M.KuenleLöper, PhilippPhilippLöperRothfelder, M.M.RothfelderJanz, StefanStefanJanzNickel, K.-G.K.-G.NickelEibl, OliverOliverEibl2022-03-1120.12.20142010https://publica.fraunhofer.de/handle/publica/36895910.24406/publica-fhg-368959Amorphous hydrogenated Si1-xCx / SiC multilayers consisting of alternating Si1-xCx and stoichiometric SiC layers were prepared using Plasma Enhanced Chemical Vapour Deposition (PECVD). Annealing at temperatures up to 1100°C was done targeting the size controlled crystallization of Si nanocrystals (NCs) in a SiC matrix. The influence of annealing temperature on the nanostructure of the multilayers was studied using Glancing Incidence X-ray Diffraction (GIXRD), Raman spectroscopy and Transmission Electron Microscopy (TEM). GIXRD reveal the crystallization of Si and SiC, when annealing temperatures exceed 900°C. The crystallization of Si and SiC was confirmed by TEM bright field imaging and electron diffraction. Annealing at 900°C, leads to the formation of Si NCs with a size of 3 nm, whereas the SiC NCs also have a size of 3 nm. However, a large amount of Si is still amorphous as shown by Raman spectroscopy. Annealing at temperatures exceeding 900°C reduces the amorphous phase and a further growth of Si NCs occurs.enSolarzellen - Entwicklung und CharakterisierungSilicium-PhotovoltaikFarbstoff-Organische und Neuartige SolarzellenTandemsolarzellen auf kristallinem SiliciumKristalline Silicium- Dünnschichtsolarzellen621697conference paper