Hodges, JasonJasonHodgesAlbahrani, Sayed AliSayed AliAlbahraniSchwitter, BryanBryanSchwitterKhandelwal, SourabhSourabhKhandelwal2022-05-062022-05-062021https://publica.fraunhofer.de/handle/publica/41697010.1109/IMS19712.2021.9574979This paper presents for the first-time a physics-based non-linear large signal model for Ka-band GaN power amplifier design using the new industry standard ASM-HEMT compact model. A novel methodology combining the effectiveness and accuracy of modeling the intrinsic device region with ASM-HEMT, and distributed effects at Ka-band with electromagnetic (EM) simulations is developed. The intrinsic semiconductor region for each finger of the GaN HEMT device is modeled with ASM-HEMT, and in a multi-finger device, the single finger model is coupled with EM simulations capturing distributed effects accurately. The developed non-linear model shows excellent accuracy with measured non-linear data for a commercial GaN-HEMT device, and with measurements performed on a Ka-band MMIC power amplifier.encompact modelGaN HEMTpower amplifierASM-HEMT667conference paper