Pavelescu, E.-M.E.-M.PavelescuWagner, J.J.WagnerKudrawiec, R.R.KudrawiecDumitrescu, M.M.DumitrescuKonttinen, J.J.KonttinenDhaka, V.D.S.V.D.S.DhakaLemmetyinen, H.H.LemmetyinenPessa, M.M.Pessa2022-03-102022-03-102005https://publica.fraunhofer.de/handle/publica/35048710.1109/ICIPRM.2005.15175532-s2.0-33747385339We have observed that the bandgap of lattice-matched GaInNAs-on-GaAs epilayers, grown by molecular beam epitaxy under constant fluxes, noticeably increases as growth temperature increases within the 410-470°C range. The increase in the band gap with increasing growth temperature has been found to be due to a decrease in the substitutional nitrogen content as well as to an enhancement in the amount of N-Ga3In clusters relative to the N-Ga4 ones.en667conference paper