Schönfelder, A.A.SchönfelderWeisser, S.S.WeisserRalston, J.D.J.D.RalstonRosenzweig, JosefJosefRosenzweig2022-03-032022-03-031994https://publica.fraunhofer.de/handle/publica/18436910.1109/68.313043The addition of strain and p-doping in high-speed GaAs-based MQW lasers are assessed experimentally in terms of their potential for both increasing the differential gain, theta g/theta N, and reducing the modulus of the differential refractive index, |theta n/theta N|, in order to decrease the linewidth enhancement factor, alpha. The increased differential gain with strain alone is found to be offset by a corresponding increase of |theta n/theta N|. The further addition of p-doping, on the other hand, simultaneously increases theta g/theta N and decreases theta n/theta N, yielding a substantial reduction in alpha.endifferential gaindifferentieller Gewinnlinewidth enhancement factorLinienverbreiterungsfaktorp-dopingp-Dotierung621667535Differential gain, refractive index, and linewidth enhancement factor in high-speed GaAs-based MQW lasers - influence of strain and p-dopingDifferentieller Gewinn, Berechnungsindex und Linienverbreiterungsfaktor in GaAs-basierenden MQW-Hochgeschwindigkeitslasern - Einfluss der Verspannung und p-Dotierungjournal article