Kelemen, M.T.M.T.KelemenWeber, J.J.WeberRattunde, MarcelMarcelRattundeKaufel, G.G.KaufelSchmitz, J.J.SchmitzMoritz, R.R.MoritzMikulla, MichaelMichaelMikullaWagner, J.J.Wagner2022-03-032022-03-032006https://publica.fraunhofer.de/handle/publica/21092610.1109/LPT.2006.870146High-power 1.91-µm (AlGaIn)(AsSb) quantum-well diode laser single emitters and linear arrays with improved waveguide design were fabricated and characterized. The use of a rather narrow waveguide core results in a remarkable low fast axis beam divergence of 44 deg full-width at half-maximum. For single emitters, a continuous-wave (CW) output power of nearly 2 W has been observed. We have achieved 16.9 W in CW mode at a heat sink temperature of 20 deg C. The efficiencies of more than 25% are among the highest values reported so far for GaSb-based diode lasers, and allow the use of passively cooled and, thus, less expensive heat sink technologies.enGaSbhigh-power diode laserHochleistungslaserdiode laserDiodenlaserfar fieldFernfeldbarBarrenlaser arrayLaserarray621667535journal article