Wang, Z.M.Z.M.WangAs, D.J.D.J.AsJantz, W.W.JantzWindscheif, J.J.Windscheif2022-03-082022-03-081991https://publica.fraunhofer.de/handle/publica/318549The temperature of photoexcited electrons in LEC-grown semi-insulating GaAs is determined by photoluminescence spectroscopy at low temperature. From the electron temperature the carrier lifetime is calculated. We report two-dimensional high resolution (50mym) temperature and lifetime topography of wafers with different annealing history. A strict correlation is found between lifetime and luminescence intensity. The electron temperature and its spatial variation are strongly modified by annealing and are thus useful quality criteria for a quantitative comparison.enelectron temperatureElektronentemperaturGaAsLebensdauerlifetimePL-topographyPL-topography621667conference paper