Cäsar, M.M.CäsarDammann, MichaelMichaelDammannPolyakov, V.M.V.M.PolyakovWaltereit, PatrickPatrickWaltereitQuay, RüdigerRüdigerQuayMikulla, MichaelMichaelMikullaAmbacher, OliverOliverAmbacher2022-03-112022-03-112010https://publica.fraunhofer.de/handle/publica/367406The influence of the electric field on the reliability of AlGaN/GaN HEMTs is investigated in this work. We calculate the electric field strength in one of the most sensitive regions of the device and also apply a drain-voltage step-stress method to our device and change the field amplitude in the gate-drain-region. This procedure enables us to assign technological parameters mitigating the peak field strength and improve reliability.en667conference paper