Under CopyrightKaminzky, DanielDanielKaminzkyRoßhirt, KatharinaKatharinaRoßhirtKallinger, BirgitBirgitKallingerBerwian, PatrickPatrickBerwianFriedrich, JochenJochenFriedrich2022-03-1216.6.20152015https://publica.fraunhofer.de/handle/publica/38849410.24406/publica-fhg-388494ensemiconductorsilicon carbide4H-SiChomoepitaxypoint defectsextended defectsstacking faultsphotoluminescenceUV-PLDLScarrier lifetimeµ-PCDsurface topographyAFM670620530Influence of growth temperature on the defect density for 4H-SiC homoepitaxyEinfluss der Wachstumstemperatur auf die Defektdichte in der 4H-SiC Homoepitaxieposter