Fisicaro, G.G.FisicaroHuet, K.K.HuetNegru, R.R.NegruHackenberg, M.M.HackenbergPichler, P.P.PichlerTaleb, N.N.TalebLa Magna, A.A.La Magna2022-03-042022-03-042013https://publica.fraunhofer.de/handle/publica/23179410.1103/PhysRevLett.110.117801Anomalous impurity redistribution after a laser irradiation process in group-IV elements has been reported in numerous papers. In this Letter, we correlate this still unexplained behavior with the peculiar bonding character of the liquid state of group-IV semiconductors. Analyzing the B-Si system in a wide range of experimental conditions we demonstrate that this phenomenon derives from the non-Fickian diffusion transport of B in l-Si. The proposed diffusion model relies on the balance between two impurity states in different bonding configurations: one migrating at higher diffusivity than the other. This microscopic mechanism explains the anomalous B segregation, whereas accurate comparisons between experimental chemical profiles and simulation results validate the model.enmelting laster annealingMLAsiliconboronsegregation670620530journal article