Schramm, C.C.SchrammSchlaak, W.W.SchlaakMekonnen, G.G.G.G.MekonnenPassenberg, W.W.PassenbergUmbach, A.A.UmbachSeeger, A.A.SeegerWolfram, P.P.WolframBach, H.-G.H.-G.Bach2022-03-032022-03-031996https://publica.fraunhofer.de/handle/publica/18947910.1049/el:19960730The successful fabrication of AlInAs/GaInAs HEMTs, regrown by MBE on patterned optical waveguide surfaces after the local removal of a previously grown photodiode layer stack, is reported. The devices are part of a distributed amplifier within an integrated optoelectronic receiver intended to operate at a 1.55 mu m wavelength and at bit rates of 20 and/or 40 Gbit/s. The performance of the HEMTs is highly comparable to reference devices grown on planar surfaces.enaluminium compoundsdistributed amplifiersgallium arsenidehigh electron mobility transistorsiii-v semiconductorsindium compoundsintegrated optoelectronicsmolecular beam epitaxial growthoptical receiverssemiconductor epitaxial layerssemiconductor growthwaveguide integrated hemtsmbebit ratespatterned optical waveguide surfacesdistributed amplifierintegrated optoelectronic receiverreference devices1.55 micrometre20 Gbit/s40 Gbit/sAlInAs-GaInAsinp621384journal article