Saint-Cast, PierrePierreSaint-CastHofmann, MarcMarcHofmannRentsch, JochenJochenRentschPreu, RalfRalfPreu2022-03-082022-03-082014https://publica.fraunhofer.de/handle/publica/310197The method involves providing a semiconductor substrate (3). The semiconductor substrate is inserted into a process chamber (1) and an aluminum oxide layer is deposited by plasma enhanced chemical vapor deposition to form plasma in a plasma zone by supplying the aluminum-containing gas. The suction of the gases from the process chamber is enabled during the chemical vapor deposition. The plasma zone is created with respect to the aluminum-containing gas flow between the supply point of the aluminum-containing gas and suction location of the gases in the process chamber. An independent claim is included for device for applying aluminum oxide layer on semiconductor substrate.de621patent102012219667