Sartorius, B.B.SartoriusReier, F.F.ReierWolfram, P.P.Wolfram2022-03-032022-03-031991https://publica.fraunhofer.de/handle/publica/18077310.1016/0921-5107(91)90157-QThermal degradation is identified as the origin for a variety of defects in epitaxial layers. The consequences of these defects are more critical than those of dislocations. It turns out that thermal degradation affects the layer quality more than dislocations.endislocationsgallium arsenideheat treatmentiii-v semiconductorsindium compoundsoptical microscopysemiconductor epitaxial layerssemiconductorsthermal degradationqualitydefectsepitaxial layerslayer qualityInGaAsP-InP621620The consequences of dislocations and thermal degradation on the quality of InGaAsP/InP epitaxial layersjournal article