Amirpour, RaulRaulAmirpourSchwantuschke, DirkDirkSchwantuschkeBrueckner, PeterPeterBruecknerQuay, RüdigerRüdigerQuayAmbacher, OliverOliverAmbacher2022-03-142022-03-142019https://publica.fraunhofer.de/handle/publica/404295This paper gives a first presentation of an AlGaN/GaN high electron-mobility varactor grown on a high resistivity silicon substrate. The technology is compared to a GaN on silicon carbide technology and the devices are characterized by fitting a large-signal model. Compared to GaN on SiC varactors a similar performance is achieved. Only slightly increased losses due to higher sheet and contact resistance lower the Q-factor of the GaN on Si varactor.engallium nitride (GaN)Silicon (Si)GaN on Sivaractorhigh electron-mobility varactor (HEMVAR)667conference paper