Bornholdt, C.C.BornholdtTrommer, D.D.TrommerUnterborsch, G.G.UnterborschBach, H.G.H.G.BachKappe, F.F.KappePassenberg, W.W.PassenbergRehbein, W.W.RehbeinReier, F.F.ReierSchramm, C.C.SchrammStenzel, R.R.StenzelUmbach, A.A.UmbachVenghaus, H.H.VenghausWeinert, C.M.C.M.Weinert2022-03-032022-03-031992https://publica.fraunhofer.de/handle/publica/18226310.1063/1.107460A detector stage comprising a photodiode, a field-effect transistor, and a load resistor, and a wavelength demultiplexer have been monolithically integrated in the GaInAsP/InP material system. Chips were mounted into complete modules and operated in a 1.3 mu m/1.55 mu m bidirectional transmission link. At 576 Mbit/s and 10-9 bit error rate the sensitivity of the module was -21 dBm, while the intrinsic sensitivity of the receiver was determined to be -21 dBm.enfield effect integrated circuitsgallium arsenideiii-v semiconductorsindium compoundsinfrared detectorsintegrated optoelectronicsmultiplexing equipmentoptical communication equipmentphotodiodesreceiversintegrated wavelength demultiplexer receivermonolithic integrationiii-v semiconductordetector stagephotodiodefield-effect transistorload resistorbidirectional transmission linkbit error ratesensitivityintrinsic sensitivity1.3 micron1.55 micron576 mbit/sinpGaInAsP-InP621journal article