Hurm, V.V.HurmBenz, W.W.BenzBronner, WolfgangWolfgangBronnerFink, T.T.FinkKöhler, KlausKlausKöhlerLao, Z.Z.LaoLudwig, M.M.LudwigRaynor, B.B.RaynorRosenzweig, JosefJosefRosenzweigWindscheif, J.J.Windscheif2022-03-092022-03-091997https://publica.fraunhofer.de/handle/publica/328371The first 20 Gbit/s 1.3-1.55 mu m wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using a 0.3 mu m gate length AlGaAs/GaAs HEMT process. At a wavelength of 1.3 mu m the integrated InGaAs MSM photodiode has a responsivity of 0.32 A/W and the photoreceiver has a -3 dB bandwidth of 16.5 GHz. Clearly-opened eye diagrams for a 20 Gbit/s 1.55 mu m optical data stream have been demonstrated.enmonolithic integrationmonolithische IntegrationoptoelectronicsOptoelektronikPhotoempfängerphotoreceiver621667conference paper