Burenkov, A.A.BurenkovTietzel, K.K.TietzelLorenz, J.J.LorenzRyssel, H.H.RysselSchwalke, U.U.Schwalke2022-03-092022-03-091999https://publica.fraunhofer.de/handle/publica/333624A suppression of the narrow channel effect for deep sub-micron CMOS transistors when using a novel device architecture called EXTIGATE has recently been shown. This work compares the narrow channel effect in the EXTIGATE and in conventional shallow trench isolated MOS transistors by means of three-dimensional coupled process and device simulation. The 3D simulation analysis shows that the bird's beak shaped thickening of the gate oxide and the sharply terminated gate electrode at the edge of the active area which are typical for the EXTIGATE technology play an important role in the suppression of the narrow channel effect.enCMOS transistornarrow channel effect3D simulation670620530conference paper