Unterborsch, G.G.UnterborschTrommer, D.D.TrommerUmbach, A.A.UmbachMekonnen, G.G.G.G.Mekonnen2022-03-092022-03-091996https://publica.fraunhofer.de/handle/publica/32735510.1109/ICIPRM.1996.491972Future high-bit rate optical communication networks operating at bit rates above 40 Gbit/s and, in particular, wireless cellular mobile communication systems based on an optical distribution network necessitate the availability of accordingly fast, but also highly efficient photodetectors especially for the 1.55 mu m wavelength region. We present an InP based pin-photodetector with an integrated passive optical waveguide using evanescent field coupling for operation in the wavelength around of 1.55 mu m.encellular radioiii-v semiconductorsindium compoundsinfrared detectorsintegrated opticsintegrated optoelectronicsoptical couplersoptical waveguidesphotodetectorshigh-bandwidth mu m waveguide integrated photodetectorhigh-bit rate optical communication networkswireless cellular mobile communication systemsoptical distribution networkefficient photodetectorsmu m wavelength regionInP based pin-photodetectorintegrated passive optical waveguideevanescent field coupling1.55 mum40 Gbit/sinp621conference paper