Linkohr, S.S.LinkohrSchwarz, S.S.SchwarzKrischok, S.S.KrischokLorenz, P.P.LorenzCimalla, VolkerVolkerCimallaNebel, C.E.C.E.NebelAmbacher, OliverOliverAmbacher2022-03-042022-03-042010https://publica.fraunhofer.de/handle/publica/22258410.1002/pssc.200983531AlGaN/GaN pH sensitive devices were functionalized and passivated for the use as selective biosensors. For the passivation, a multilayer of SiO2 and SiNx is proposed, which stabilizes the pH-sensor, is biocompatible and has no negative impact on the following bio-functionalization. The functionalization of the GaN-surface was achieved by covalent bonding of 10-amino-dec-1-ene molecules by a photochemical process. After exposure to ultraviolet light, islands of TFAAD are growing on the sensor surface. After 3 h exposure one monolayer is completed. Further exposure results in thicker films as a consequence of polymerization. The bonding to the sensor surface was analyzed by x-ray photo electron spectroscopy, while the thickness of the functionalization was determined by atomic force microscopy scratching experiments. These functionalized devices based on the pH-sensitive AlGaN/GaN ISFET will establish a new family of adaptive, selective biomolecular sensors such as selective, reusable DNA sensors.enAlGaN/GaNMOCVDbiosensorpassivation667journal article