Hinkov, I.I.HinkovHarzendorf, G.G.HarzendorfKluska, S.S.KluskaHinkov, B.B.HinkovKamaruzaman, K.K.KamaruzamanBeigang, R.R.BeigangHeinrich, J.J.HeinrichHoefling, S.S.HoeflingForchel, A.A.Forchel2022-03-102022-03-102007https://publica.fraunhofer.de/handle/publica/357588In this paper we report experimental results on the generation of broadband Terahertz (THz) radiation using photoconductive emitters on the base of low-temperature-grown (LT) InGaAs for excitation with 1060 nm wavelength. The material properties of the semiconductor layers were investigated and the emitter function optimised. As experimental arrangement we have used a THz time-domain-spectroscopy (TDS) system. The THz spectrum reaches up to 3 - 4 THz, the signal to noise ratio was more than one hundred.en621conference paper