Kranzer, DirkDirkKranzerBurger, BrunoBrunoBurgerReiners, F.F.ReinersWilhelm, C.C.Wilhelm2022-03-112022-03-112009https://publica.fraunhofer.de/handle/publica/36476810.4229/24thEUPVSEC2009-4BV.1.2The application of silicon carbide (SiC) transistors in PV-inverters is shown and rated respective to their performance. Currently, there are several field effect or bipolar transistor types in development with normally-on and normally-off characteristics. It is not yet clear, which transistor type will prevail in the market and which will remain a niche product. The difference in performance and switching behaviour to standard Silicon transistors is pointed out, to demonstrate the optimum application for each transistor type.en621697conference paper