Weber, JohannesJohannesWeberFung, RitaRitaFungWong, RichardRichardWongWolf, HeinrichHeinrichWolfGieser, A. HorstA. HorstGieserMaurer, LinusLinusMaurer2022-03-142022-03-142018https://publica.fraunhofer.de/handle/publica/40251110.23919/EOS/ESD.2018.8509761Challenging the limits of todays metrology and test setups for CDM and Capacitively Coupled Transmission Line Pulsing (CC-TLP), the study identifies critical stress parameters for a 25 Gbps communication device in the CDM-domain. Only CC-TLP stress in combination with a 33/63 GHz single shot oscilloscope was able to relate significant differences of failure current distributions to the rise time spread in the order of few tens of picoseconds and to obtain a conclusive sharp pass/fail transition at a certain peak current level.enCC-TLPCDMCapacitively Coupled Transmission Line Pulsingcharged device modelESDelectrostatic dischargehigh speed devicerise timeslew ratecritical stress parameterpogo pin capacitancepicosecond domainpeak current mapintegrated circuittesting621conference paper