Under CopyrightDimroth, FrankFrankDimrothRoesener, TobiasTobiasRoesenerEssig, StephanieStephanieEssigWeuffen, ChristophChristophWeuffenWekkeli, AlexanderAlexanderWekkeliOliva, EduardEduardOlivaSiefer, GeraldGeraldSieferVolz, KerstinKerstinVolzHannappel, ThomasThomasHannappelHäussler, DietrichDietrichHäusslerJäger, WolfgangWolfgangJägerBett, Andreas W.Andreas W.Bett2022-03-0418.1.20192014https://publica.fraunhofer.de/handle/publica/23643410.1109/jphotov.2014.2299406Two different process technologies were investigated for the fabrication of high-efficiency GaInP/GaAs dual-junction solar cells on silicon: direct epitaxial growth and layer transfer combined with semiconductor wafer bonding. The intention of this research is to combine the advantages of high efficiencies in III-V tandem solar cells with the low cost of silicon. Direct epitaxial growth of a GaInP/GaAs dual-junction solar cell on a GaAsyP1-y buffer on silicon yielded a 1-sun efficiency of 16.4% (AM1.5g). Threading dislocations that result from the 4% lattice grading are still the main limitation to the device performance. In contrast, similar devices fabricated by semiconductor wafer bonding on n-type inactive Si reached efficiencies of 26.0% (AM1.5g) for a 4-cm2 solar cell device.enMaterialien - Solarzellen und TechnologieIII-V und Konzentrator-PhotovoltaikIII-V Epitaxie und SolarzellenbondingSiliciumwafer bondingIII-V auf Siliciumjournal article