Toader, M.M.ToaderSchubel, R.R.SchubelHartmann, MartinMartinHartmannScharfenberg, L.L.ScharfenbergJordan, R.R.JordanMertig, M.M.MertigSchulz, Stefan E.Stefan E.SchulzGeßner, ThomasThomasGeßnerHermann, SaschaSaschaHermann2022-03-052022-03-052016https://publica.fraunhofer.de/handle/publica/24639910.1016/j.cplett.2016.07.049Direct synthesis of poly (sodium 4-styrenesulfonate) (P(NaSS)) inside the channel of single-walled carbon nanotube (SWCNT) field-effect transistors (FETs), is shown to be highly beneficial in improving the device parameters. Starting with monomeric compounds, the FET-channel was in-situ polymerized, using the self-initiated photografting and photopolymerization process. Upon formation of the P(NaSS) polymer matrix, we report improved device-to-device consistency, lower variability in the threshold voltage, higher drain currents and higher on/off ratios. Annealing in vacuum was shown to further improve the device performance and induce an ambipolar behavior. Moreover, those FET devices showed a long-term stability even under ambient environment.en541journal article