Gassel, HelmutHelmutGasselVogt, HolgerHolgerVogt2022-03-082022-03-081993https://publica.fraunhofer.de/handle/publica/302855The description refers to a process for the production of a monocrystalline silicon film which is separated from a silicon substrate below it by a buried insulation layer. In addition to the process steps used for a SIMOX process to obtain a SIMOX wafer structure with a buried SIMOX oxide layer and a silicon layer above it, the following steps are provided by the invention: produce a dielectric layer on the SIMOX silicon wafer and/or a silicon base wafer, wafer bonds between these wafers such that they are bonded together at their front ends, apply an etching protective layer on the silicon base wafer and etch the rear side of the SIMOX silicon wafer down to the buried SIMOX oxide layer.de608621patent1992-4210859