Seifert, S.S.SeifertRavash, R.R.RavashFranke, D.D.FrankeWenning, F.F.WenningZengler, D.D.ZenglerKießling, F.F.Kießling2022-03-122022-03-122013https://publica.fraunhofer.de/handle/publica/38128510.1109/ICIPRM.2013.6562583Optimized extended-InGaAs photodetectors were grown on InP substrate using metamorphic buffer layers to achieve a strain relaxation. The samples were investigated by transmission electron microscopy and X-Ray diffraction. The results show that a number of metamorphic buffer layers and their thickness play an important role in material quality and photodetectors performance.enconference paper