CC BY-NC 4.0Lackner, DavidDavidLacknerHöhn, OliverOliverHöhnMüller, RalphRalphMüllerBeutel, PaulPaulBeutelSchygulla, PatrickPatrickSchygullaHauser, HubertHubertHauserPredan, FelixFelixPredanSiefer, GeraldGeraldSieferSchachtner, MichaelMichaelSchachtnerSchön, JonasJonasSchönBenick, JanJanBenickHermle, MartinMartinHermleDimroth, FrankFrankDimroth2022-03-0618.8.20202020https://publica.fraunhofer.de/handle/publica/26390410.1002/solr.202000210The terrestrial photovoltaic market is dominated by single‐junction silicon solar cell technology. However, there is a fundamental efficiency limit at 29.4%. This is overcome by multijunction devices. Recently, a GaInP/GaAs//Si wafer‐bonded triple‐junction two‐terminal device is presented with a 33.3% (AM1.5g) efficiency. Herein, it is analyzed how this device is improved to reach a conversion efficiency of 34.1%. By improving the current matching, an efficiency of 35% (two terminals, AM1.5g) is expected.enPhotovoltaikSilicium-PhotovoltaikIII-V und Konzentrator-PhotovoltaikHerstellung und Analyse von hocheffizienten Si-SolarzellenIII-V Epitaxie und Solarzellensolar cellMOVPEwafer bondingmulti junction solar cell621697journal article