Lischke, B.B.LischkeBrunner, M.M.BrunnerHerrmann, K.H.K.H.HerrmannHeuberger, A.A.HeubergerKnapek, E.E.KnapekSchnakenberg, U.U.SchnakenbergBennecke, W.W.BenneckeSchäfer, P.P.Schäfer2022-03-022022-03-021989https://publica.fraunhofer.de/handle/publica/177475To overcome the throughput limitations in electron beam nanolithography, a multi beam system is proposed. Theoretical considerations show that this e-beam comb-probe printer with 1024 probes will be capable of combining 25 nm resolution with a maximum beam current of 5 MyA. This allows an exposure speed of 0.1 square centimeter/s, which is orders of magnitude superior to today's most advanced equipment. In addition, the multi beam principle is considered for nanometer pattern inspection and for ion-beam techniques. The basic concepts for these applications are presented. Practical feasibility investigations are the subject of current research.encomb probe printerelectron beam lithographymulti beam conceptmulti beam inspectionmulti beam techniquenanometer patternwafer exposureX-ray lithography621530journal article