Rahimi, Z.Z.RahimiErdmann, A.A.ErdmannPflaum, C.C.Pflaum2022-03-112022-03-112009https://publica.fraunhofer.de/handle/publica/36561410.1109/ICEAA.2009.5297317Light diffraction from lithography masks depends on the geometrical shape of the mask pattern which is created by an etch process. The analysis of relevant effects requires the application of an accurate electromagnetic field solver. In this paper, we present an appropriate simulation method based on the Finite Integration (FI) technique for solving Maxwell's equations.en670conference paper