Klos, MatthiasMatthiasKlosBartholdt, RichardRichardBartholdtKlier, JensJensKlierLampin, Jean FrançoisJean FrançoisLampinBeigang, RenéRenéBeigang2022-03-132022-03-132016https://publica.fraunhofer.de/handle/publica/39468910.1117/12.2217505We present investigations of photoconductive antennas (PCA) based on low temperature grown GaAs (LT GaAs) on silicon infstrates for terahertz (THz) generation and detection. The PCAs consist of 2 mm thick layers of LT GaAs grown on a high resistivity silicon infstrate in order to reduce the intrinsic absorption losses around 8 THz due to a strong phonon resonance in GaAs. Using 20 fs long pump pulses around 800 nm and dipole antennas with dipole lengths between 20 mm and 60 mm a maximum bandwidth up to 12 THz and a maximum dynamic range exceeding 90 dB at 0.5 THz were obtained. The average output power was measured with a calibrated detector to be 95 mW at a repetition rate of 80 MHz.enTerahertz WavesAntennasGallium ArsenidePhotoconductivitySubmillimeter Waves621conference paper