Pechmann, StefanStefanPechmannReichel, PeterPeterReichelSpätling, ThorstenThorstenSpätlingHagelauer, AmelieAmelieHagelauer2025-09-222025-09-222025-05-25https://publica.fraunhofer.de/handle/publica/49613510.1109/ISCAS56072.2025.11043670This work presents three differential RRAM memory cell designs, that enable multi-state operation. By adding switchable resistances as well as sequential read and programming operations, the proposed configurations enhance memory stability and enable easy system integration by providing a fully-digital interface without the need of analog references. They can combine the advantages of differential memory cells and RRAM’s multi-level capability. The concepts were realized using a CMOS-integrated RRAM technology and completely integrated in a standard cell grid. The proposed concept has potential to be extended to even more levels and can be adapted to different resistive switching technologies.enResistorsPower system stabilityStability analysisSecurityStandardsSwitching circuitsDifferential MemoryMemory IntegrationReRAMResistive SwitchingRRAMSwitchesSystem integrationProgrammingCircuits and systemsconference paper