Saint-Cast, PierrePierreSaint-CastBelledin, UdoUdoBelledinLohmüller, ElmarElmarLohmüllerKafle, BishalBishalKafleWeber, JulianJulianWeberSeren, SabineSabineSerenLohmüller, SabrinaSabrinaLohmüllerWolf, AndreasAndreasWolfHofmann, MarcMarcHofmann2022-03-1419.6.20192018https://publica.fraunhofer.de/handle/publica/40470810.24406/publica-r-40470810.4229/35thEUPVSEC20182018-2BO.3.4Using atmospheric pressure chemical vapour deposition (APCVD) of phosphosilicate glass (PSG) allows the separation of the PSG deposition and the thermal drive-in, adding another degree of freedom and control to the emitter formation. A large survey is carried out varying the process parameters such as phosphorus concentration and layer thickness of the PSG layer and the temperature and duration of the thermal drive-in in a tube furnace. We show that the data of the survey can train a metamodel, which can predict the emitter sheet resistances Rsh based on the process parameters. An emitter with Rsh = 120 /sq and an emitter dark saturation current density j0e = 40 fA/cm² after firing (textured surface, SiNX passivation) is demonstrated using this approach. For the formation of a selective emitter, laser diffusion is carried out. The laser process takes place between the PSG layer deposition and the drive-in process. A 1.4 mm deep profile with a peak concentration of 7×1019 cm-3 at the surface is fabricated using a longpulse infrared laser. This process leads to a specific contact resistivity C = 4.2 mcm² using a commercially available screen-printed and fired silver paste. Specific contact resistivity down to C = 1 mcm² is reached using a short-pulse green laser process.enPlasmatechnologiePhotovoltaikSilicium-PhotovoltaikOberflächen: KonditionierungPassivierungLichteinfangEmitterAPCVDLaser621697Selective Emitter Using APCVD PSG Layer as Doping Sourceconference paper