Riva, M.M.RivaPittroff, M.M.PittroffSchware, T.T.SchwareOshinowo, J.J.OshinowoWieland, R.R.Wieland2022-03-042022-03-042009https://publica.fraunhofer.de/handle/publica/218286A new F-2 gas mixture was evaluated as a substitute for conventional cleaning gases such as, NF3, C2F6, and CF4, in a CVD chamber. The new mixture was compatible with the equipment used and improvement was seen in the etch rate as well as a reduction in the amount of gas needed to complete the clean.en621537Etch performance of Ar/N2/F2 for CVD/ALD chamber cleanjournal article