Dragoi, V.V.DragoiMittendorfer, G.G.MittendorferThanner, C.C.ThannerLindner, P.P.LindnerAlexe, M.M.AlexePintilie, L.L.PintilieHamacher, M.M.HamacherHeidrich, H.H.Heidrich2022-03-102022-03-102007https://publica.fraunhofer.de/handle/publica/35744810.1109/SMICND.2006.283949GaInAsP/InP passive microring resonator devices were successfully fabricated using a vertical integration concept with GaInAsP/InP-on-GaAs wafer bonding. BCB adhesive bonding has been identified as the preferred wafer bonding process. This paper reports results on the development of the wafer bonding and on the microring fabrication.en621conference paper