Tegetmeyer, B.B.TegetmeyerSchreyvogel, C.C.SchreyvogelLang, NicolaNicolaLangMüller-Sebert, W.W.Müller-SebertBrink, D.D.BrinkNebel, C.E.C.E.Nebel2022-03-052022-03-052016https://publica.fraunhofer.de/handle/publica/24285510.1016/j.diamond.2016.01.022The silicon vacancy center (SiV) in diamond is promising for future quantum applications due to its unique properties like narrowband emission in the near infrared regime at 738 nm and photostability at room temperature. In this paper we investigate the photoluminescence and electroluminescence properties of SiV centers incorporated into the intrinsic-layer of single crystalline diamond p-i-n junction diodes via in-situ doping during CVD-growth. The experiments reveal electrical excitation of the SiV emission by applying forward currents. The electroluminescence and photoluminescence properties are compared and discussed.enSiV centerp-i-n Diode553journal article