Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes

Under CopyrightRudolph, OliverOliverRudolphEvanschitzky, PeterPeterEvanschitzkyErdmann, AndreasAndreasErdmannBär, EberhardEberhardBärLorenz, JürgenJürgenLorenz2022-03-1117.1.20122011https://publica.fraunhofer.de/handle/publica/37300510.24406/publica-fhg-373005enphase-shift photomaskrigorous electro-magnetic field (EMF) simulationwaveguideline-edge roughness (LER)line-width roughness (LWR)CD variationaerial image contrastprocess window670620530Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processesposter