Kunzel, H.H.KunzelEbert, S.S.EbertGibis, R.R.GibisKaiser, R.R.KaiserKizuki, H.H.KizukiMalchow, S.S.Malchow2022-03-092022-03-091997https://publica.fraunhofer.de/handle/publica/329545Selective MOMBE growth of InP-GaInAsP optical waveguide structures by MOMBE was studied for butt coupling with a double heterostructure (DH) laser. Selective deposition was accomplished at a growth temperature of 485 degrees C using SiNx for masking the laser mesa on top and partially on the side walls. The influence of the native oxide desorption process, the growth conditions (V/III-ratio) and undercut etching of the vertical part of the mask was investigated. Uniform waveguide deposition even at the mesa edges of the laser, a low lateral growth rate of approximately 20 percent of the vertical rate and reduced excessive growth near the edge of the vertical mask were successfully achieved.endesorptionetchinggallium arsenideiii-v semiconductorsindium compoundsintegrated opticsinterface structurejoining processesmasksmolecular beam epitaxial growthoptical couplersoptical fabricationoptical waveguidessemiconductor growthsemiconductor lasersselective mombe growthlateral interfacewaveguide/laser butt-jointsInP-GaInAsP optical waveguide structurebutt couplingdouble heterostructure lasergrowth temperaturesinx masklaser mesanative oxide desorptiongrowth conditionsv/iii-ratioundercut etchinguniform waveguide depositionmesa edgelateral growth ratevertical growth ratereduced excessive growthvertical maskmonolithic photonic integrated circuits485 degcInP-GaInAsP621conference paper