Lebedev, VadimVadimLebedevPolyakov, V.M.V.M.PolyakovKnübel, A.A.KnübelAidam, RolfRolfAidamKirste, LutzLutzKirsteCimalla, VolkerVolkerCimallaGranzner, R.R.GranznerSchwierz, F.F.SchwierzAmbacher, OliverOliverAmbacher2022-03-042022-03-042011https://publica.fraunhofer.de/handle/publica/22448310.1002/pssc.201000441For high frequency field effect transistors, one of the promising approaches is to grow a very thin (<=10 nm) InN channel pseudomorphically with low defect density between low lattice mismatched InGaN layers. The present work provides a comprehensive analysis of such structures by varying width of the InN well. Both experimental and theoretical approaches have been applied in order to optimize the InN potential well structure for a transistor operation.enInNfield effect transistorepitaxysimulation667journal article