Influence of heteroepitaxy on the width and frequency of the e-2 (high)-phonon line in GaN studied by Raman-spectroscopy

Giehler, M.M.GiehlerRamsteiner, M.M.RamsteinerWaltereit, PatrickPatrickWaltereitBrandt, O.O.BrandtPloog, K.H.K.H.PloogObloh, H.H.Obloh2022-03-032022-03-032001https://publica.fraunhofer.de/handle/publica/19892410.1063/1.13474062-s2.0-0035307667en621667530Influence of heteroepitaxy on the width and frequency of the e-2 (high)-phonon line in GaN studied by Raman-spectroscopyjournal article