Bornholdt, C.C.BornholdtDöldissen, W.W.DöldissenFiedler, F.F.FiedlerKaiser, R.R.KaiserKowalsky, W.W.Kowalsky2022-03-022022-03-021987https://publica.fraunhofer.de/handle/publica/17652510.1049/el:19870002An InGaAs PIN photodiode was vertically integrated with an inverted optical rib waveguide in InGaAsP. Guided light was transferred to and absorbed by the photodiode at a rate of 0.07 dB/ mu m. For detectors with sufficient length (>300 mu m) a responsivity of 0.81 A/W was achieved at 1.3 mu m wavelength.engallium arsenideiii-v semiconductorsindium compoundsintegrated optoelectronicsoptical waveguidesphotodiodesvertical integrationp-i-n diodespin photodiodeinverted optical rib waveguide1.3 micronInGaAs-InGaAsp-InP621384journal article