Heber, J.J.HeberMuhlig, C.C.MuhligTriebel, W.W.TriebelDanz, N.N.DanzThielsch, R.R.ThielschKaiser, N.N.Kaiser2022-03-032022-03-032002https://publica.fraunhofer.de/handle/publica/20261910.1007/s00339-002-1446-0Time-resolved luminescence experiments have been set up in order to study the interaction of 193-nm laser radiation with dielectric thin films. At room temperature, Al/sub 2/O/sub 3/ coatings show photoluminescence upon ArF excimer laser irradiation, with significant intensity contributions besides the known substrate emission. Time- and energy-resolved measurements indicate the presence of oxygen-defect centers in Al/sub 2/O/sub 3/ coatings, which suggests a strong single- photon interaction at 193 nm by F/sup +/ and F center absorption. Measurements on highly reflective thin-film stacks, consisting of quarter-wave Al/sub 2/O/sub 3/ and SiO/sub 2/ layers, indicate similar UV excitations, mainly from color centers of Al/sub 2/O/sub 3/endeep UV laser induced luminescenceoxide thin filmstime-resolved luminescencedielectric thin filmsAl/sub 2/O/sub 3/ coatingsoxygen- defect centersstrong single-photon interactionF center absorptionF/sup +/ center absorptionhighly reflective thin-film stackscolor centers193 nm620621journal article